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FGPF45N45T 450V, 45A PDP Trench IGBT
December 2007
FGPF45N45T
450V, 45A PDP Trench IGBT
Features
* High Current Capability * Low saturation voltage: VCE(sat) =1.6V @ IC = 45A * High input impedance * Fast switching * RoHS complaint
tm
General Description
Using Novel Trench IGBT Technology, Fairchild's new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
Applications
* PDP System
C
TO-220F
1 1.Gate 2.Collector 3.Emitter
G
E
Absolute Maximum Ratings
Symbol
VCES VGES ICM (1) PD TJ Tstg TL
Description
Collector to Emitter Voltage Gate to Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds @ TC = @ TC = 25oC 25oC
Ratings
450 30 180 51.6 20.6 -55 to +150 -55 to +150 300
Units
V V A W W
oC oC o
@ TC = 100oC
C
Notes: 1: Repetitive test , Pulse width=100usec , Duty=0.1 * Ic_pluse limited by max Tj
Thermal Characteristics
Symbol
RJC(IGBT) RJA
Parameter
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Typ.
-
Max.
2.42 62.5
Units
o
C/W
oC/W
(c)2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGPF45N45T Rev. A
FGPF45N45T 450V, 45A PDP Trench IGBT
Package Marking and Ordering Information
Device Marking
FGPF45N45T
Device
FGFP45N45TTU
Package
TO-220F
Packaging Type
Rail / Tube
Max Qty Qty per Tube
50ea
per Box
-
Electrical Characteristics of the IGBT
Symbol
Off Characteristics BVCES BVCES TJ ICES IGES
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250A VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
450 -
0.5 -
100 400
V V/oC A nA
On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250A, VCE = VGE IC = 20A, VGE = 15V IC = 45A, VGE = 15V IC = 45A, VGE = 15V, TC = 125oC Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 2140 130 102 pF pF pF 3.0 4.3 1.21 1.60 1.57 5.5 1.5 V V V V
Switching Characteristics td(on) tr td(off) tf td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 200V, IC = 45A, VGE = 15V VCC = 200V, IC = 45A, RG = 10, VGE = 15V, Resistive Load, TC = 125oC VCC = 200V, IC = 45A, RG = 10, VGE = 15V, Resistive Load, TC = 25oC 26 100 170 220 22 90 132 280 100 15 46 330 ns ns ns ns ns ns ns ns nC nC nC
FGPF45N45T Rev. A
2
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FGPF45N45T 450V, 45A PDP Trench IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
180 150
Collector Current, IC [A]
TC = 25 C
o
Figure 2. Typical Output Characteristics
180
TC = 125 C
o
20V 15V 12V
20V 12V
10V
15V 10V
150
Collector Current, IC [A]
120 90 60 30 0 0 2 4 Collector-Emitter Voltage, VCE [V] 6
VGE = 8V
120 90 60 30 0 0 2 4 Collector-Emitter Voltage, VCE [V] 6
VGE = 8V
Figure 3. Typical Saturation Voltage Characteristics
180 150
Collector Current, IC [A]
Common Emitter VGE = 15V TC = 25 C
Figure 4. Transfer Characteristics
180 150
Collector Current, IC [A]
Common Emitter VCE = 20V TC = 25 C TC = 125 C
o o
o
120 90 60 30 0 0
TC = 125 C
o
120 90 60 30 0
1 2 3 Collector-Emitter Voltage, VCE [V]
4
0
2
4 6 8 10 Gate-Emitter Voltage,VGE [V]
12
Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level
1.8
Collector-Emitter Voltage, VCE [V]
Common Emitter VGE = 15V
Figure 6. Saturation Voltage vs. VGE
20
Collector-Emitter Voltage, VCE [V]
Common Emitter TC = 25 C
o
1.6
45A
16
12
1.4
30A
8
1.2
IC = 20A
4
30A IC = 20A 45A
1.0 25
50 75 100 125 o Collector-EmitterCase Temperature, TC [ C]
0
0
4 8 12 16 Gate-Emitter Voltage, VGE [V]
20
FGPF45N45T Rev. A
3
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FGPF45N45T 450V, 45A PDP Trench IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter TC = 125 C
o
Figure 8. Capacitance Characteristics
10000
Cies Coes
Collector-Emitter Voltage, VCE [V]
16
Capacitance [pF]
1000
Cres
12
8
100
Common Emitter VGE = 0V, f = 1MHz TC = 25 C
o
4
30A IC = 20A
45A
0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20
10 1 10 Collector-Emitter Voltage, VCE [V]
30
Figure 9. Gate charge Characteristics
15
Common Emitter TC = 25 C
o
Figure 10. SOA Characteristics
500 100
IC MAX (Pulse) 100s 10s
Gate-Emitter Voltage, VGE [V]
12
VCC = 100V 200V
Collector Current, Ic [A]
9
10
IC MAX (Continuous)
1ms 10 ms
6
1
3
0.1
0 0 30 60 90 Gate Charge, Qg [nC] 120
Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature
DC Operation
0.01 0.1
1 10 100 Collector-Emitter Voltage, VCE [V]
1000
Figure 11. Turn-on Characteristics vs. Gate Resistance
500
Figure 12. Turn-off Characteristics vs. Gate Resistance
1000
100
tr
Switching Time [ns]
Switching Time [ns]
tf
100
td(off)
td(on)
10
Common Emitter VCC = 200V, VGE = 15V IC = 45A TC = 25 C TC = 125 C
o o
Common Emitter VCC = 200V, VGE = 15V IC = 45A TC = 25 C
o o
1 0 10 20 30 40 50
Gate Resistance, RG []
10 0 10
TC = 125 C
20 30 Gate Resistance, RG []
40
50
FGPF45N45T Rev. A
4
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FGPF45N45T 450V, 45A PDP Trench IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs. Collector Current
200
Common Emitter VGE = 15V, RG = 10 TC = 25 C
o o
Figure 14. Turn-off Characteristics vs. Collector Current
1000
100
Switching Time [ns]
Switching Time [ns]
TC = 125 C tr
tf
100
td(off)
Common Emitter VGE = 15V, RG = 10 TC = 25 C TC = 125 C
o o
td(on)
10 10
20
30
40
45
10 10
20
30
40
45
Collector Current, IC [A]
Collector Current, IC [A]
Figure 15. Switching Loss vs. Gate Resistance
1000
Figure 16. Switching Loss vs.Gate Resistance
1000
Eoff
Eoff
Switching Loss [J]
Switching Loss [J]
100
Eon
Eon
100
Common Emitter VCC = 200V, VGE = 15V IC = 45A TC = 25 C TC = 125 C
o o
10
Common Emitter VGE = 15V, RG = 10 TC = 25 C TC = 125 C
o o
10
0
10
20
30
40
50
1 10
20
30
40
45
Gate Resistance, RG []
Collector Current, IC [A]
Figure 17. Transient Thermal Impedance of IGBT
10
Thermal Response [Zthjc]
0.5
1
0.2 0.1 0.05 0.02 0.01
PDM t1 t2
0.1
0.01
single pulse
Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC
1E-3 1E-5
1E-4
1E-3
0.01
0.1
1
10
100
1000
Rectangular Pulse Duration [sec]
FGPF45N45T Rev. A
5
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FGPF45N45T 450V, 45A PDP Trench IGBT
Mechanical Dimensions
TO-220F
3.30 0.10
10.16 0.20 (7.00)
o3.18 0.10
2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47
9.75 0.30
0.80 0.10
(3 0 )
0.35 0.10 2.54TYP [2.54 0.20]
#1 0.50 -0.05 2.54TYP [2.54 0.20]
4.70 0.20
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
FGPF45N45T Rev. A
6
15.87 0.20
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FGPF45N45T 450V, 45A PDP Trench IGBT
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R)
(R)
Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM
Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R)
(R)
PDP-SPMTM Power220(R)
Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM The Power Franchise(R)
TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I31
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
FGPF45N45T Rev. A
7
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